central semiconductor corp. tm process CP208 power transistor npn - amp/switch transistor chip princip al device types cjd31c mje182 tip31c process epitaxial base die size 66 x 66 mils die thickness 12.5 1.0 mils base bonding pad area 12 x 24 mils emitter bonding pad area 11 x 14 mils top side metalization al - 50,000? back side metalization cr/ni/ag - 16,000? process details geometry backside collector 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r2 (1-august 2002) gross die per 4 inch w afer 2,630 central semiconductor corp. tm
central semiconductor corp. tm process CP208 typical electrical characteristics 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r2 (1-august 2002) central semiconductor corp. tm
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